Mitsubishi recently developed a GaN high-electron mobility transistor or GaN HEMT Ku-band amplifier for several satellite earth stations. The gallium nitride device runs at 12-18 GHz, and was developed to help reduce the number of high frequency amplifiers currently being used to just half. This will also reduce the need for power transmitter equipment.
GaN devices have steadily been replacing GaAs amplifiers since the latter has been more prone to saturated electron speeds, and high breakdown voltage.
The latest GaN HEMT from Mitsubishi has 30 percent more power efficiency. This quality is crucial as satellite communications in the ku band require power-saving measures, as it is used in severe weather conditions, and extraordinary situations like natural disasters. Hard to reach areas which need communication links also rely on mobile earth-based stations.
Samples of Mitsubishi's GaN HEMT device, MGFK47G3745, will be shipped starting October 1.
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